Processing of poly-Si electrodes for charge-coupled devices
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Processing of poly-Si electrodes for charge-coupled devices by John W. Sherohman

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Published by Dept. of Energy, Lawrence Livermore Laboratory, for sale by the National Technical Informaion Service] in [Livermore, Calif.], [Springfield, Va .
Written in English


  • Electrodes.,
  • Silicon.

Book details:

Edition Notes

StatementJohn W. Sherohman and Fred D. Cook.
SeriesUCID ; 17995, UCID -- 17995.
ContributionsCook, Fred D., 1929-, United States. Dept. of Energy., Lawrence Livermore Laboratory.
The Physical Object
Pagination11 p. :
Number of Pages11
ID Numbers
Open LibraryOL15239146M

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This book gives an introduction to electronic devices. The book covers the curriculum of basic electronic devices and their operation principles. We chose a midway between just mentioning the final I-V or C-V characteristics of each device and their full derivation from scratch. At first, poly-Si was grown by solid phase growth from a-Si using furnace anneal at about °C for tens of hours. Now excimer laser annealing (ELA) of XeCl is generally used for crystallization. Poly-Si grown by this method has grains of the size from to m and its field effect mobility is about cm 2 /V by: 2.   FIGS. 8A and 8B provide schematic illustrations of a calcium ion selective sensor and an ammonia sensor. These sensors are charge coupled devices based on a FET design using peapod CNTs and cladded peapod CNTs. In FIG. 8B, the cladding can be PTFE which functions as a gas permeable barrier and the ionophore is selective to ammonium ion in the. The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically voltage of the covered gate determines the electrical conductivity of the.